High Frequency Small-Signal Modelling of GaN High Electron Mobility Transistors for RF applications by Zhen Liu B.ENG., Universi
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Small-signal and noise equivalent circuit model of the modeled GaN HEMTs. | Download Scientific Diagram
![A simplified equivalent circuit model for a GaN HEMT device with zero... | Download Scientific Diagram A simplified equivalent circuit model for a GaN HEMT device with zero... | Download Scientific Diagram](https://www.researchgate.net/publication/315463367/figure/fig2/AS:751598364016642@1556206422376/A-simplified-equivalent-circuit-model-for-a-GaN-HEMT-device-with-zero-drain-bias.png)
A simplified equivalent circuit model for a GaN HEMT device with zero... | Download Scientific Diagram
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Micromachines | Free Full-Text | A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
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Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements | International Journal of Microwave and Wireless Technologies | Cambridge Core
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Figure 1 from Equivalent circuit GaN HEMT model accounting for gate-lag and drain-lag transient effects | Semantic Scholar
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Energies | Free Full-Text | A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters
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Electronics | Free Full-Text | Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE
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