A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
Color online Schematic epitaxial and device structure of an InP /... | Download Scientific Diagram
Indium Phosphide (InP) HEMTs – Millimeter-Wave Electronics Laboratory (MWE) | ETH Zurich
Pushing indium phosphide DHBT frequency to 1.2THz
InP IC Technology Powers Instruments Past 100 GHz | Microwaves & RF
Ultra-high-speed 300-GHz InP IC Technology for Beyond 5G | NTT Technical Review
Physics-based compact modeling and parameter extraction for InP heterojunction … von Tobias Nardmann - Fachbuch - bücher.de
InP-Transistoren mit verbessertem thermischem Widerstand durch integrierte Diamant-Wärmesenke | Ferdinand-Braun-Institut
Pushing indium phosphide DHBT frequency to 1.2THz
A THz InGaAs/InP double heterojunction bipolar transistor with fmax=325 GHz and BVCBO=10.6 V
InGaP/GaAsSb/InGaAsSb/InP Double Heterojunction Bipolar Transistors With Record ft of 813 GHz | Semantic Scholar
New Symbolically Defined Model for InP Heterojunction Bipolar Transistors | 2018-07-15
HBT-Transistor :: heterojunction bipolar transistor (HBT) :: ITWissen.info
Peter Ressel - Ohm-Kontakte für die Basis von InP/In0.53Ga0.47As-Hetero-Bipolartransistoren in der Optoelektronik
InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers | Semantic Scholar
Hard X-ray detection in an InP nanowire transistor: (a) schematic of... | Download Scientific Diagram
Device performance and strain effect of sub-5 nm monolayer InP transistors - Journal of Materials Chemistry C (RSC Publishing)
InP-Transistoren mit verbessertem thermischem Widerstand durch integrierte Diamant-Wärmesenke | Ferdinand-Braun-Institut
Applied Sciences | Free Full-Text | Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems
High-Speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology
InP-HBT-Transceiver | Ferdinand-Braun-Institut
A review of InP/InAlAs/InGaAs based transistors for high frequency applications - ScienceDirect
Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits
