Nanodevice Laboratory
Semiconductor industry switches to hafnium-based transistors: Physics Today: Vol 61, No 2
3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence | Scientific Reports
Polysilicon - an overview | ScienceDirect Topics
Fabrication of high performance thin-film transistors via pressure-induced nucleation | Scientific Reports
What is the difference between metal gate and polysilicon gate technology? - Quora
File:MOSFET Manufacture - 3 - polysilicon gate.svg - Wikimedia Commons
high k oxide 구조에서 Metal gate 쓰는 이유, poly depletion effect란?
FEOL (Front End of Line: substrate process, the first half of wafer processing) 3. Gate oxidation and gate formation | USJC：United Semiconductor Japan Co., Ltd.
Polysiliziumverarmung – Wikipedia
Why is polysilicon used as a gate contact instead of metal in CMOS? - Quora
Lecture 18 OUTLINE The MOS Capacitor (cont'd) – Effect of oxide charges – Poly-Si gate depletion effect – V T adjustment Reading: Pierret ; Hu. - ppt download
P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology
Lecture #23 Poly-Si Gate Depletion
![PDF] A Simple CMOS Self-Aligned Double-Gate Poly-Si TFT Technology | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/63064e1dc40d04a4bd78a3a9ff6cdf81bf9bf8b6/1-Figure1-1.png "PDF] A Simple CMOS Self-Aligned Double-Gate Poly-Si TFT Technology | Semantic Scholar")
PDF] A Simple CMOS Self-Aligned Double-Gate Poly-Si TFT Technology | Semantic Scholar
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전자소자] Poly Si Gate depletion (폴리 실리콘 게이트 ) : 네이버 블로그
Effect of the various doping concentration of BF2+ on polysilicon-gate PMOS | Semantic Scholar
FEOL (Front End of Line: substrate process, the first half of wafer processing) 3. Gate oxidation and gate formation | USJC：United Semiconductor Japan Co., Ltd.
Electronics | Free Full-Text | Analytical Current-Voltage Model for Gate-All-Around Transistor with Poly-Crystalline Silicon Channel
Lecture #23 Poly-Si Gate Depletion
A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory | SpringerLink
High-Performance Pi-Gate Poly-Si Junctionless and Inversion Mode FET
